Key Features  

• Innovative 3D V-NAND Technology
 
• Incredible Read/Write Performance
 
• Enhanced Endurance and Reliability

3D V-NAND Technology

Samsung's innovative 3D V-NAND flash memory architecture breaks through the density, performance and endurance limitations of today's conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

TurboWrite Technology

Achieve incredible read/write performance to maximize your everyday computing experience with Samsung's TurboWrite technology. You can obtain up to 2x faster random read/write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.

* Performance compared to 3-Bit MLC-class SSD drives

Improved Energy Efficiency

The 850 EVO delivers significantly longer battery life on your notebook* with a controller designed and optimized for 3D V-NAND that supports Device Sleep for Windows at a highly efficient 2mW. The 850 EVO houses 25% better power efficiency than the 840 EVO during write operations thanks to ultra-efficient 3D V-NAND only consuming 50% less energy than that of traditional Planar 2D NAND.

* Compared to standard hard drive & previous generation SSDs

Enhanced Endurance and Reliability

The 850 EVO doubles the endurance* and reliability** compared to the previous generation 840 EVO** and features a class-leading*** 5-year warranty. With enhanced long-term reliability, the 850 EVO assures dependable performance up to 30% longer than the previous generation 840 EVO.

* Measured by Terrabytes Written (TBW)
** Measured with Sustained Performance 12hr Random Write Test
*** Highest among 3-Bit MLC-class SSD drives